| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting element manufacturing method wherein a light emitting element having a translucent conductive semiconductor substrate is protected from damage by dispensing with the step of laminating the translucent conductive semiconductor substrate to the light emitting layer. <P>SOLUTION: A complex board 50 is prepared by laminating a transparent conductive semiconductor substrate of GaP to the first main surface of a light emitting layer growth preparation layer wherein a plurality of unit preparation layers 8 of AlGaInP are arranged in the in-plane direction separated from each other by growth inhibiting gaps 11. Light emitting layers 24 of AlGaInP are epitaxially grown on the second main surface MP2 of the light layer growth preparation layer of the complex board 50, while layer growth in regions other than the unit preparation layers 8 is inhibited by the growth inhibiting gaps 11, for the formation of a light emitting layer unit growth section 13 on each of the unit preparation layers 8. The complex board 50 with the light emitting unit growth sections 13 formed thereon is segmented at least at the locations of the growth inhibiting gaps 11 for obtaining individual element chips 100 based on the light emitting layer growth sections 13. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
