| 发明名称 |
Semiconductor device and its production process |
| 摘要 |
In a semiconductor device having a cobalt silicide film, at least nickel or iron is contained in the cobalt silicide film for preventing the rise of resistance incidental to thinning of the film.
|
| 申请公布号 |
US6960832(B2) |
申请公布日期 |
2005.11.01 |
| 申请号 |
US20040761333 |
申请日期 |
2004.01.22 |
| 申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
SHIMAZU HIROMI;IWASAKI TOMIO;OHTA HIROYUKI;MIURA HIDEO;IKEDA SHUJI |
| 分类号 |
H01L21/285;H01L21/336;H01L21/768;(IPC1-7):H01L23/12;H01L21/00 |
主分类号 |
H01L21/285 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
