Method of preparing a silicon dioxide layer by high temperature oxidation on a substrate having, at least on the surface, germanium or a silicon-germanium alloy

摘要

Method of preparing a silicon dioxide layer by high-temperature oxidation on a substrate of formula Si_1-xGe_x in which x is greater than 0 and less than or equal to 1, the said method comprising the following successive steps: a) at least one additional layer of thickness h_y and of overall formula Si_1-yGe_y, in which y is greater than 0 and less than x, is deposited on the said substrate of formula Si_1-xGe_x; and b) the high-temperature oxidation of the said additional layer of overall formula Si_1-yGe_y is carried out, whereby the said additional layer is completely or partly converted into a layer of silicon oxide SiO₂. Method of preparing an optical or electronic component, comprising at least one step for preparing an SiO₂ layer using the method described above.