发明名称 |
Fully-depleted-collector silicon-on-insulator (SOI) bipolar transistor useful alone or in SOI BiCMOS |
摘要 |
A bipolar transistor structure is described incorporating an emitter, base, and collector having a fully depleted region on an insulator of a Silicon-On-Insulator (SOI) substrate without the need for a highly doped subcollector to permit the fabrication of vertical bipolar transistors on semiconductor material having a thickness of 300 nm or less and to permit the fabrication of SOI BiCMOS. The invention overcomes the problem of requiring a thick semiconductor layer in SOI to fabricate vertical bipolar transistors with low collector resistance.
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申请公布号 |
US6949764(B2) |
申请公布日期 |
2005.09.27 |
申请号 |
US20040993244 |
申请日期 |
2004.11.19 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
NING TAK HUNG |
分类号 |
H01L21/8249;H01L21/331;H01L27/12;H01L29/08;H01L29/73;(IPC1-7):H01L29/40 |
主分类号 |
H01L21/8249 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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