发明名称 |
Method of Manufacturing Single-Crystal GaN Substrate, and Single-Crystal GaN Substrate |
摘要 |
Manufacture at lower cost of off-axis GaN single-crystal freestanding substrates having a crystal orientation that is displaced from (0001) instead of (0001) exact. With an off-axis (111) GaAs wafer as a starting substrate, GaN is vapor-deposited onto the starting substrate, which grows GaN crystal that is inclined at the same off-axis angle and in the same direction as is the starting substrate. Misoriented freestanding GaN substrates may be manufactured, utilizing a misoriented (111) GaAs baseplate as a starting substrate, by forming onto the starting substrate a mask having a plurality of apertures, depositing through the mask a GaN single-crystal layer, and then removing the starting substrate. The manufacture of GaN crystal having a misorientation of 0.1° to 25° is made possible.
|
申请公布号 |
US2005208687(A1) |
申请公布日期 |
2005.09.22 |
申请号 |
US20050907033 |
申请日期 |
2005.03.17 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
KASAI HITOSHI;MOTOKI KENSAKU |
分类号 |
C30B29/38;C30B25/02;C30B25/18;C30B29/40;H01L21/205;H01L33/16;H01L33/32;(IPC1-7):H01L21/00 |
主分类号 |
C30B29/38 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|