发明名称 |
Schottky barrier diode |
摘要 |
A Schottky barrier diode has a Schottky electrode formed on an operation region of a GaAs substrate and an ohmic electrode surrounding the Schottky electrode. The ohmic electrode is disposed directly on an impurity-implanted region formed on the substrate. A nitride film insulates the ohmic electrode from a wiring layer connected to the Schottky electrode crossing over the ohmic electrode. The planar configuration of this device does not include the conventional polyimide layer, and thus has a better high frequency characteristics than conventional devices.
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申请公布号 |
US2005179106(A1) |
申请公布日期 |
2005.08.18 |
申请号 |
US20050103598 |
申请日期 |
2005.04.12 |
申请人 |
SANYO ELECTRIC COMPANY, LTD. |
发明人 |
ASANO TETSURO;ONODA KATSUAKI;NAKAJIMA YOSHIBUMI;MURAI SHIGEYUKI;TOMINAGA HISAAKI;HIRATA KOICHI;SAKAKIBARA MIKITO;ISHIHARA HIDETOSHI |
分类号 |
H01L21/329;H01L29/872;(IPC1-7):H01L27/095 |
主分类号 |
H01L21/329 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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