发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a high yield peeling method for a laminated body which causes no damage to the laminated body, and a manufacturing method of a flexible semiconductor device. <P>SOLUTION: This manufacturing method of the semiconductor device comprises the first step of laminating a metal layer, an oxide layer, a layer formed of a raw material containing no hydrogen element, and a laminated body on a first substrate; the second step of forming a photocatalyst layer on the surface of a translucent substrate; and the third step of bonding the surface of the laminated body and the photocatalyst layer with a first adhesive after the first and second steps, carrying out the peeling at between the metal layer and the oxide layer, then casting light from the translucent substrate and separating the photocatalyst layer and the first adhesive at the interface between them, and removing the first adhesive. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2005197673(A) 申请公布日期 2005.07.21
申请号 JP20040357491 申请日期 2004.12.10
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 TAKAYAMA TORU;ARAI YASUYUKI;SUZUKI YUKIE
分类号 H01L21/20;H01L21/02;H01L21/336;H01L27/12;H01L29/786;(IPC1-7):H01L27/12 主分类号 H01L21/20
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