| 发明名称 |
Manufacturing method of semiconductor device |
| 摘要 |
A method of manufacturing a semiconductor device. A cobalt film is formed on a wafer including gate, source, and drain regions. An initial protection metal film is formed with an initial amount of a protection metal film material on the cobalt film. The wafer is thermally treated to form a cobalt silicide film. An additional protection metal film is formed with an additional amount of the protection metal film material.
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| 申请公布号 |
US2005142822(A1) |
申请公布日期 |
2005.06.30 |
| 申请号 |
US20040024610 |
申请日期 |
2004.12.30 |
| 申请人 |
DONGBUANAM SEMICONDUCTOR, INC. |
发明人 |
HAN JAE-WON |
| 分类号 |
H01L21/24;H01L21/285;H01L21/336;H01L21/44;H01L29/78;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/24 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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