| 摘要 |
PROBLEM TO BE SOLVED: To suppress plane channeling at the time of ion implantation without changing a crystal plane direction of a wafer itself. SOLUTION: At the time of ion implantation into the semiconductor wafer W1, a tilting angleθwith respect to a (100)-plane is set to 0°or above and a twisting angleδwith respect to the <011>-direction is set within a range of 45°±5°. COPYRIGHT: (C)2005,JPO&NCIPI
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