| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a gold bump and its manufacturing method which assures necessary bump height and can reduce gold remarkably without deteriorating reliability. SOLUTION: An underlying metal layer 14 for grounds is formed on an Al pad 12 and a passivation film 13 on its ambients. Basic bump member except Au, e.g. a Cu post 15 is formed by Cu plating on the underlying metal layer 14 for grounds. An Au plating layer 16 is formed on the Cu post 15 which occupies a thickness of about 2/3 of the whole bump. The Au plating layer 16 has a thickness of at most half of Cu post 15. Further, an Au plating layer 17 which covers the Cu post 15 and the whole surface of the Au plating layer 16 is formed. COPYRIGHT: (C)2005,JPO&NCIPI
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