| 摘要 |
<P>PROBLEM TO BE SOLVED: To avoid data holding failure which is easily caused especially in a low temperature region when holding data of a memory cell. <P>SOLUTION: A semiconductor memory 5 detects temperature T0 where output voltage Vtemp of a temperature detecting circuit 2 is equal to output voltage Vref0 of a reference voltage generating circuit 1 is satisfied, lowers a value of the reference voltage Vref by arbitrary voltage ΔV from an external power source Vdd by a variable potential generating circuit 6 in a low temperature region of this temperature T0 or less, and this lowered voltage (Vdd-ΔV ) is supplied to the word line WL of a memory cell 4 through a word line driver 3 as a variable potential power source Vcp. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
