| 摘要 |
A semiconductor memory device comprises a silicon substrate having a main surface, a trench formed on the silicon substrate to open in the main surface and a memory cell formed on the trench. The memory cell includes a first storage holding part formed on a first side wall of the trench, a second storage holding part formed on a second side wall of the trench, impurity diffusion layers formed on both sides of the trench and a gate electrode formed to extend from the trench onto the impurity diffusion layers for covering the first and second storage holding parts.
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