SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device with an interlayer insulating layer embedded well even in a miniturized semiconductor device. SOLUTION: A semiconductor device comprises: a semiconductor layer 10; a first interlayer insulating layer 20 formed at the upper part of the semiconductor layer 1; a wiring layer 30 formed at the upper part of the first interlayer insulating layer 20; and a second interlayer insulating layer 50 including a low dielectric constant layer 40 filled between the wiring layers 30. The low dielectric constant layer 40 comprises a plurality of layers having different contents of fluorine. COPYRIGHT: (C)2005,JPO&NCIPI