发明名称 |
Atomic layer deposition method |
摘要 |
An apparatus and method for performing atomic layer deposition. A plurality of substrates are loaded into a plurality of reaction cells. The reaction cells are disposed in a reaction chamber isolated from an exterior condition. Various paper substances are ultimately and repeatedly applied onto each substrate such that a thin film is formed on each substrate. The plurality of vapor injection pipes each inject one of the vapor substances by periodically scanning over each substrate to apply substance.
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申请公布号 |
US6872421(B2) |
申请公布日期 |
2005.03.29 |
申请号 |
US20030645169 |
申请日期 |
2003.08.19 |
申请人 |
JUSUNG ENGINEERING CO., LTD |
发明人 |
HWANG CHUL-JU;SHIM KYUNG-SIK |
分类号 |
H01L21/205;C23C16/44;C23C16/455;(IPC1-7):C23C16/00 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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