发明名称 Atomic layer deposition method
摘要 An apparatus and method for performing atomic layer deposition. A plurality of substrates are loaded into a plurality of reaction cells. The reaction cells are disposed in a reaction chamber isolated from an exterior condition. Various paper substances are ultimately and repeatedly applied onto each substrate such that a thin film is formed on each substrate. The plurality of vapor injection pipes each inject one of the vapor substances by periodically scanning over each substrate to apply substance.
申请公布号 US6872421(B2) 申请公布日期 2005.03.29
申请号 US20030645169 申请日期 2003.08.19
申请人 JUSUNG ENGINEERING CO., LTD 发明人 HWANG CHUL-JU;SHIM KYUNG-SIK
分类号 H01L21/205;C23C16/44;C23C16/455;(IPC1-7):C23C16/00 主分类号 H01L21/205
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