<p>There is provided a magnetic storage cell capable of effectively changing the magnetization direction of a magneto-sensitive layer. The magnetic storage cell includes an annular magnetic layer 4a through which a write bit line 5a generating a magnetic field passes; and a TMR film S20a having a first magneto-sensitive layer 14a whose magnetization direction is changed by a magnetic field in the annular magnetic layer 4a and a magnetoresistive element 20a arranged on the surface of the first magneto-sensing layer 14a so that current flows in the direction vertical to the lamination plane. The first magneto-sensing layer 14a has a thickness defined to be in a range not smaller than 0.5 nm and not greater than 40 nm.</p>
