| 摘要 |
PROBLEM TO BE SOLVED: To form wiring while preventing the generation of hydrogen after forming a capacitive insulating film consisting of a ferroelectric film. SOLUTION: A semiconductor device is provided with a capacitive element 5 constituted of a lower electrode 2, the capacitive insulating film 3 consisting of the ferroelectric film, and an upper electrode 4 which are successively formed upward on a substrate 1; an interlayer dielectric 6 formed so as to cover the capacitive element 5; and contacts consisting of laminated metallic films 9 formed so as to be extended through the interlayer dielectric 6, and connected to the lower electrode 2 and the upper electrode 4. Each laminated metallic film 9 is constituted of a barrier metal film 7 and a copper film 8 consisting of a seed metal film and an electrolytic metal plate film which are successively formed upward. COPYRIGHT: (C)2005,JPO&NCIPI
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