发明名称 |
Deposition tool cleaning process having a moving plasma zone |
摘要 |
The present invention provides, in one embodiment, a process for cleaning a deposition chamber (100). The process includes a step (100) of forming a reactive plasma cleaning zone by dissociating a gaseous fluorocompound introduced into a deposition chamber having an interior surface and in a presence of a plasma. The process (100) further includes a step (120) of ramping a flow rate of said gaseous fluorocompound to move the reactive plasma cleaning zone throughout the deposition chamber, thereby preventing a build-up of localized metal compound deposits on the interior surface. Other embodiments advantageously incorporate the process (100) into a system (200) for cleaning a deposition chamber (205) and a method of manufacturing semiconductor devices (300).
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申请公布号 |
US2005045213(A1) |
申请公布日期 |
2005.03.03 |
申请号 |
US20030653661 |
申请日期 |
2003.09.02 |
申请人 |
TEXAS INSTRUMENTS, INCORPORATED |
发明人 |
BLANCO IGNACIO;ZHAO JIN;KRUSE NATHAN |
分类号 |
B08B7/00;C23C16/44;(IPC1-7):B08B9/00 |
主分类号 |
B08B7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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