| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable low noise oxide semiconductor laser element. SOLUTION: A ZnO based semiconductor laser element has a quantum well active layer 105 including a ZnO barrier layer and a Cd<SB>0.1</SB>Zn<SB>0.9</SB>O well layer and performs self oscillation. Stimulated emission can thereby be realized with extremely high quantum efficiency utilizing powerful exciton binding energy and since self oscillation characteristics are provided, noise and power consumption can be reduced. COPYRIGHT: (C)2005,JPO&NCIPI
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