| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of removing a protective film with the step of hardly etching a compound film. SOLUTION: The method for manufacturing the semiconductor device comprises the steps of sequentially forming a titanium film 107 and a titanium nitride film 109 on a silicon layer 105, forming a titanium silicide film 111 by heat treating an SOI substrate 150, and removing the titanium nitride film 109 and the unreacted film 107 after forming the film 111. In a process for forming the film 107, the film 107 is formed in a predetermined thickness so that the unreacted film 107 is left all over the film 111 when the film 111 is formed in an intended thickness. In a process for removing the film 109 and the unreacted film 107, the film 109 and the film 107 are removed by a wet etching with the use of the hydrofluoric acid solution. COPYRIGHT: (C)2005,JPO&NCIPI
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