METHOD OF FORMING IMD WITH VOIDS FOR PREVENTING DEGRADATION OF ELECTRICAL PROPERTIES

摘要

PURPOSE: A method of forming an IMD(Inter-Metal Dielectric) is provided to prevent the degradation of electrical properties due to a low-k material by forming voids in the IMD. CONSTITUTION: A metal pattern(10) is formed on a wafer by etching selectively a metal film using a photoresist pattern as an etching mask. A liner oxide layer(50) is formed along the upper surface of the resultant structure by using HDP(High Density Plasma). The liner oxide layer is selectively removed from an upper portion of the metal pattern. At this time, the liner oxide layer of an upper sidewall of the metal pattern is roundly formed. A cap oxide layer(80) with voids(70) is formed on the resultant structure by using a PECVD(Plasma Enhanced Chemical Vapor Deposition) and planarized.