| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-single crystal semiconductor material provided on a film substrate at low temperatures, having a superior photo response performance and optical durability, and a light emitting element, a photoelectric converting element, a thin film transistor, and a photosensor using them, and to provide a method for manufacturing it. SOLUTION: The non-single crystal semiconductor material mainly composed of a silicon and/or germanium has a photo response expressed by a ratio of a dark conductivity to a light conductivity being not less than 10<SP>3</SP>, and a strength of the Raman scattering resulted from a crystal component is not less than 1.2 times nor more than 6 times of a strength of the Raman scattering resulted from an amorphous component. This provides a semiconductor material having a certain degree of crystallinity and a high photo response, and having a low deterioration caused by light owing to a certain degree of crystallinity. COPYRIGHT: (C)2005,JPO&NCIPI
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