| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can be protected from ESD (electrostatic discharge) breakdown with high reliability. SOLUTION: The semiconductor device comprises an internal circuit and a protection circuit. The internal circuit comprises first well regions 11 and 12, and a first semiconductor element formed in the first well regions 11 and 12. The protection circuit is for protecting the first semiconductor element, and comprises second well regions 33 and 34 which have an impurity concentration lower than that of the first well regions 11 and 12, and a second semiconductor element 30 formed in the second well regions 33 and 34. COPYRIGHT: (C)2005,JPO&NCIPI
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