METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device having a shallow impurity region. SOLUTION: In the method for manufacturing a semiconductor device, a gate electrode part having a gate oxide film, a floating gate on the gate oxide film, a control gate on the floating gate, and an oxide formed by oxidizing the floating gate and the control gate is formed on a semiconductor. Impurities are then added to the semiconductor using the gate electrode part as a mask to form an impurity region having a depth of 0.1μm or less. COPYRIGHT: (C)2005,JPO&NCIPI