| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To obtain a large-area crystalline thin film semiconductor device that can achieve photoelectric conversion efficiency of >10%, and to obtain a solar cell element. <P>SOLUTION: In the crystalline thin film semiconductor device, a conductive electrode layer 20 is formed on the partial or whole surface of a substrate 01 and first and second silicon layers 04a and 05a are successively formed on the electrode layer 20 in this order and annealed with a laser beam 06. The first silicon layer 04a is annealed with the laser beam 06 after the layer 04a is formed to have a smaller absorption coefficient than the second silicon layer 05a has in the wavelength region of the laser beam 6 used for annealing. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
