METHOD FOR GROWING THIN FILM SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method for growing a thin film single crystal capable of forming a thin film single crystal with a high quality.

SOLUTION: The deposition apparatus 1 is an apparatus for depositing a film by a PLD (pulsed laser deposition) method where a target 3 placed on a rotating targer table 5 is irradiated with a laser beam 42 emitted from a laser part 4 to excite atoms constituting the target 3 and liberate metal atoms from the target 3 by a thermal/photochemical action. The liberated metal atoms are combined with radicals injected from a radical injection part 8 into an atmosphere in a chamber 2 and a thin film comprising a β-Ga2O3single crystal grows on a substrate 6 comprising a β-Ga2O3single crystal.

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