GROUP III NITRIDE SEMICONDUCTOR CRYSTAL, PRODUCTION METHOD THEREOF AND GROUP III NITRIDE SEMICONDUCTOR EPITAXIAL WAFER,申请号KR20047012652-传众专利搜索

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发明名称	GROUP III NITRIDE SEMICONDUCTOR CRYSTAL, PRODUCTION METHOD THEREOF AND GROUP III NITRIDE SEMICONDUCTOR EPITAXIAL WAFER
摘要
申请公布号	KR20040079443(A)	申请公布日期	2004.09.14
申请号	KR20047012652	申请日期	2003.02.14
申请人		发明人
分类号	C30B29/38;H01L33/00;C23C16/34;H01L21/20;H01L21/205;H01L33/12;H01L33/32;H01S5/30;H01S5/323;H01S5/343	主分类号	C30B29/38
代理机构		代理人
主权项
地址

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