METHOD FOR FABRICATING PATTERN OF FINE STRUCTURE BY MICROMACHINING

摘要

PURPOSE: A method for fabricating a pattern of a fine structure by micromachining is provided to prevent a loading phenomenon and a footing phenomenon by eliminating an etch structure in an open region between the patterns of the fine structure while a part of the etch structure remains wherein a mask having a plurality of uniform or ununiform etch patterns is used. CONSTITUTION: The first etch mask(106a) for defining a fine structure pattern region is formed on a semiconductor substrate(100) in which a sacrificial layer and an etch target material are stacked. The second etch masks(106b) are separated from each other by a predetermined interval in the open region between the fine structure patterns, including a plurality of fine etch patterns. The etch target material exposed by the first and second etch masks are patterned. The sacrificial layer under the etch target material is so patterned that a part of the sacrificial layer of the second etch mask is eliminated. While the first etch mask is removed, the second etch mask and the floating etch target material under the second etch mask are eliminated to form the fine structure pattern.