| 摘要 |
PURPOSE: A line etch method is provided to prevent deformation of photoresist and damage of a hard mask by using a thin photoresist layer. CONSTITUTION: A gate substance(3) for forming a line is deposited on a substrate(1). A hard mask is formed on the gate substance. A hard mask pattern(5) is formed by etching the hard mask using a thin photoresist pattern as a mask. An USG(Undoped Silicate Glass) layer(9) with bad step coverage is deposited on the resultant structure. By wet-etching, the USG layer deposited at the sidewalls of the hard mask pattern is removed. A gate line is formed by etching the gate substance using the hard mask pattern.
|
