| 摘要 |
A heat processing apparatus comprises a hot plate for putting the substrate on or near its surface, a ceiling with a first and second concentric regions with a first and second heat pipes, respectively, opposite to the hot plate surface, a member surrounding a space between the hot plate and the ceiling, a gas flow generator supplying gas to the a region from a circumference of the hot plate to a center of the ceiling, and a temperature control mechanism for controlling a regional temperature of the first region in such a manner that a heat emission is greater from a center of the substrate than from a circumference of the substrate, thus heating a substrate to a uniform temperature all over its surface.
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