| 摘要 |
PURPOSE: A semiconductor memory circuit is provided to perform a burn-in test by giving a high potential difference between bit line pair even when using a thin film transistor in a sense amplifier. CONSTITUTION: The semiconductor memory circuit has a normal operation mode and a burn-in test mode, and comprises a memory cell array(1) having a plurality of memory cells(MC) arranged in a matrix. Pairs of bit lines(BL1,/BL1,BL2,/BL2) are prepared in a row of the memory cell array, and a plurality of word lines(WL) are prepared in a column of the memory cell array. The memory cells are located at a cross point of the bit line and the word line, and comprises one transistor and one condenser.
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