METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor memory device is provided to be capable of improving the dielectric characteristic and depositing speed of a tantalum oxide layer and reducing leakage current. CONSTITUTION: A lower electrode(130) is formed on a semiconductor substrate. A stabilizing process is performed on the surface of the resultant structure. At this time, the lower electrode has oxygen atoms. A dielectric layer(140) is deposited on the resultant structure under inert gas atmosphere. At this time, the oxygen atoms are used for dissolving deposition source. A purging process is performed at a chamber, wherein the chamber is used for forming the dielectric layer. An upper electrode(150) is formed on the dielectric layer. Preferably, the lower electrode is made of ruthenium and platinum.