| 摘要 |
PROBLEM TO BE SOLVED: To reduce variation in current amplification factor caused by an ununiformity in a natural oxide film in a semiconductor device which functions as an SiGe-HBT. SOLUTION: An emitter base lamination part 20 is provided on an Si epitaxial growth layer 2 of an AiGeC-HBT. The emitter base lamination part 20 has an SiGeC spacer layer 21, an SiGeC intrinsic base layer 22 comprising high concentration boron, an SiGe cap layer 23, an Si cap layer 24 and an emitter layer 25 formed by doping the Si cap layer 24 and the SiGe cap layer 23 with phosphorous. COPYRIGHT: (C)2004,JPO
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