发明名称 |
METHOD FOR MAKING A WIRE NANOSTRUCTURE IN A SEMICONDUCTOR FILM |
摘要 |
The invention concerns a method for making a wire nanostructure, comprising the following steps: making a semiconductor film (1) extending between a first terminal (4) and a second terminal (5), and passing a current between the first and second terminals so as to form at least one continuous processing allowance (R1, R2, R3) in the semiconductive thin film, by migration, under the action of the current, a fraction of semiconducting material, the continuous processing allowance being formed along the direction of the current which flows through the film. The invention is applicable to designing nanocircuits. |
申请公布号 |
WO2004032182(A2) |
申请公布日期 |
2004.04.15 |
申请号 |
WO2003FR50072 |
申请日期 |
2003.10.02 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE;FRABOULET, DAVID;GAUTIER, JACQUES;TONNEAU, DIDIER;CLEMENT, NICOLAS |
发明人 |
FRABOULET, DAVID;GAUTIER, JACQUES;TONNEAU, DIDIER;CLEMENT, NICOLAS |
分类号 |
H01L;H01L21/306;H01L21/308;H01L21/321;H01L21/326;H01L23/525;H01L29/06 |
主分类号 |
H01L |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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