发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device (wafer level CSP) allowed to be applied to a large package also and having high productivity, reliability, etc. <P>SOLUTION: Since an active face 2 of a semiconductor element 1 on which external connecting terminals 4 are formed, a rear face 6, and side end faces 1a are sealed by thermosetting resin layers 5, 7 in a semiconductor device 10a which is a wafer level CSP, the peeling of interfaces between the thermosetting resin layers 5, 7 and the semiconductor element 1 especially under a thermal shock environment can be reduced and high packaging reliability can be secured, because a coefficient of linear expansion of the whole package reaches that of a mother board. Since the semiconductor device 10a has structure that tender silicon is not exposed, shock resistance and a component mounting property can be improved and the semiconductor device 10a can be easily applied to a large semiconductor device. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004119552(A) 申请公布日期 2004.04.15
申请号 JP20020278662 申请日期 2002.09.25
申请人 MATSUSHITA ELECTRIC WORKS LTD 发明人 KITAMURA KENJI;FUKUI TARO;HINO HIROHISA
分类号 H01L23/29;H01L23/12;H01L23/31 主分类号 H01L23/29
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