| 摘要 |
PROBLEM TO BE SOLVED: To prevent the malfunction of a photodetecting element called as the double gate transistor. SOLUTION: A photosensor 8 is provided with a transparent substrate 17 and a plurality of double gate thin film transistors (DG-TFTs) 20 arranged on one surface of the substrate 17 in a matrix-like state. Each DG-TFT 20 is provided with a bottom gate electrode 21 caused to deposit on the substrate 17, a semiconductor film 23 facing the electrode 21, and source and drain electrodes 27 and 28 respectively caused to deposit on both ends of the film 23. The DG-TFT 20 is also provided with a top gate electrode 30 facing the film 23. A protective insulating film 31 covers the DG-TFTs 20 and a transparent conductive film 32 is caused to deposit on the insulating film 31. A plurality of contact holes 34 are formed in the insulating film 31 and a top gate insulating film 29, and electrical resistance layer 33 is respectively caused to deposit in the contact holes 34. The resistance layers 33 are connected to the source electrode 27 and, at the same time, to the transparent conductive film 32. COPYRIGHT: (C)2004,JPO
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