| 摘要 |
PURPOSE: A method for manufacturing a transistor is provided to be capable of increasing the punch-through voltage of the transistor regardless of the impurity concentration of a channel. CONSTITUTION: Forming a dummy pattern having a nitride spacer(35) at the upper portion of a channel region of a semiconductor substrate(31), the first epitaxial layer(37) is grown at the predetermined upper portion of the resultant structure. An oxide spacer(39) is formed at the lateral portion of the nitride spacer. After the second epitaxial layer is formed on the entire surface of the resultant structure, a gate electrode(47) having a gate isolating layer(45) is formed at the predetermined upper portion of the second epitaxial layer. Then, a source/drain region(49) is formed at both sides of the gate electrode at the upper portion of the first epitaxial layer.
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