ELECTROSTATIC DISCHARGE PROTECTION TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: An ESD(Electrostatic Discharge) protection transistor and a method for manufacturing the same are provided to be capable of improving uniformity of current path. CONSTITUTION: A well junction region is formed in a semiconductor substrate. An isolation layer(114) is formed in the well junction region. A source region(118) and a drain region(120) are defined by the isolation layer. A source contact(124) and a drain contact(126) are connected to the source region(118) and the drain region(120) via an interlayer dielectric, respectively. A pad(128) is connected to the drain contact(126). At the time, the isolation layer(114) and the drain contact(126) have a closed loop shape.