| 摘要 |
An apparatus, system and method for the real-time monitoring of plasma charging during plasma processing are provided which overcome the deficiencies in currently available apparatus, systems and methods. According to one embodiment, the method and apparatus utilizes a detection wafer that comprises an Al pad located on the wafer and placed in contact with the plasma. The potential difference generated between the Al pad and a substrate as a result of plasma processing is the plasma charging voltage Vc. The potential difference is transmitted through electrical contacts located in a modified biased lift pin assembly supporting the detection wafer, and in the detection wafer itself, at locations remote from the plasma. Electrical contact with the detection wafer is thus established by positive physical contact from the biased lift pins and the potential difference is registered on apparatus external to the processing chamber and connected to the electrical contacts located remotely from the plasma. For example, the methodology of the present invention therefore improves on prior art devices by eliminating bonded electrical connections and wires that are traditionally located in the plasma environment and which require passage through the wall of the plasma processing chamber to connect to external monitoring and measuring equipment. |
