| 摘要 |
A B-doped Si1-x-yGexCy layer 102 (where 0<x<1, 0.01<=y<1) is epitaxially grown on a Si substrate 101 using a UHV-CVD process. In the meantime, in-situ doping is performed using B2H6 as a source gas of boron (B) which is an impurity (dopant). Next, the Si1-x-yGexCy layer 102 is annealed to form a B-doped Si1-x-yGexCy crystalline layer 103. In this case, the annealing temperature is set preferably at between 700° C. and 1200° C., both inclusive, and more preferably at between 900° C. and 1000° C., both inclusive.
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