| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which is capable of securing high resistance to moisture by preventing separation in a periphery while suppressing an increase in chip area, to provide a method of manufacturing the same, and to provide a phase shifting mask which can be used for manufacturing the semiconductor device. <P>SOLUTION: A main wall 2 is so installed as to surround an integrated circuit 1. Between each corner of the main wall and the integrated circuit, a sub-wall 3 is installed. Portions of the sub-wall which are perpendicular to each other are extended in parallel with portions of the main wall which are perpendicular to each other. A bent section of each sub-wall is positioned closest to each bent section of the main wall. Even if stress is concentrated due to heat treatment or the like, the stress is distributed to the main wall and the sub-wall, hardly causing interlayer separation or cracks. If there are generated cracks in the corners, water from outside hardly reaches the integrated circuit when the main wall and the sub-wall are connected to each other. By this structure, high resistance to moisture can be obtained. <P>COPYRIGHT: (C)2004,JPO |
