| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a high-grade thin film by an atomic layer deposition method under atmospheric pressure without using an expensive device such as a vacuum device or a valve and complicated processes. SOLUTION: A method of manufacturing a thin film includes a process of forming a region 3 comprising a first raw material gas atmosphere, a region 4 comprising a second raw material gas atmosphere and a region 5 dividing an area between the two regions and comprising a purge gas atmosphere in a film forming reaction part 1; and a process of manufacturing a thin film by alternately supplying each raw material gas onto a base material across the region 5 of the purge gas atmosphere while moving the base material 10 to each region in the film forming reaction part 1. A thin film manufacturing device includes a base material support 11, a base material moving means, a gas supplying means A of the raw material gas containing a metal halide, a gas supplying means B of the raw material gas containing oxygen and a purging means C supplying a purge gas. COPYRIGHT: (C)2004,JPO
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