摘要 |
One embodiment of the present invention provides a method of fabricating a semiconductor device including the steps of forming a first semiconductor layer; forming a second semiconductor layer over the first semiconductor layer; forming a mask over a first portion the second semiconductor layer; removing a second portion of the second semiconductor layer not covered by the mask; forming a first electrical connector on the first semiconductor layer; and forming a second electrical connector on the first portion of the second semiconductor layer.
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