发明名称 CONTRAST MEASURE MARK OF PHOTORESIST
摘要 PURPOSE: A contrast measure mark of a photoresist is provided to be capable of easily measuring the contrast without identifying the cross section of contrast. CONSTITUTION: A contrast measure mark comprises an outer box mark(1) having a desired space and width, an inner line mark(2) formed in the inner part of the outer box mark, and a cell pattern(3) formed in the inner line mark. At this time, the size of the inner line mark(2) is 1-3 micrometer. The outer box mark(1) and the inner line mark(2) are composed of a photoresist.
申请公布号 KR20030078559(A) 申请公布日期 2003.10.08
申请号 KR20020017676 申请日期 2002.03.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 HONG, JONG GYUN
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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