| 摘要 |
A method for manufacturing a semiconductor device including forming a buffer film on a semiconductor substrate, forming a element partitioning trench, forming a oxidized film on the surface of the element partitioning trench, and washing the semiconductor substrate with hydrofluoric acid. The washing removes part of the buffer film, and the end of the buffer film is inwardly removed from the top edge of the element partitioning trench by a predetermined distance. The distance and the thickness of the oxidized film are represented by the expression 0<=x<=(d/2 sin theta), where x represents the distance, and theta represents the angle between a plane parallel to the semiconductor substrate and a side surface of the element partitioning trench.
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