| 摘要 |
PROBLEM TO BE SOLVED: To provide a CVD system and a CVD method in which a variation in film thickness can be suppressed while reducing the man-power required for cleaning a gas head by sustaining the current velocity and the channel of reaction gas constantly even if the products deposited on the surface of the gas head becomes thicker gradually as the number of processed semiconductor substrates is increased and the apparent head interval is decreased. SOLUTION: The single wafer atmospheric pressure CVD system 101 comprises a pipe 4 for supplying reaction gas 3 into a reaction chamber 2, an elevating/lowering susceptor 6 for mounting a semiconductor substrate 5, a gas head 7 disposed oppositely thereto and jetting the reaction gas 3 to the semiconductor substrate 5, a section 102 for controlling the head interval between the susceptor 6 and the gas head 7, and a pipe 9 for exhausting reacted gas 8 to the outside of the reaction chamber 2, wherein the head interval controlling section 102 receives a signal from a timer 16 for measuring the integrated supply time and corrects the head interval based on correlation data. COPYRIGHT: (C)2003,JPO
|
