发明名称 Photon assisted deposition of hard mask formation for use in manufacture of both devices and masks
摘要 An exemplary method of selectively patterning a hard mask or reticle using a laser to cause deposition of hard mask material in locations forming the hard mask pattern. This method can include providing a vapor in a vapor chamber containing an integrated circuit substrate, and applying a laser to selected areas of the integrated circuit substrate to cause a reaction with the vapor and create a structure on the integrated circuit substrate.
申请公布号 US6589717(B1) 申请公布日期 2003.07.08
申请号 US20000715951 申请日期 2000.11.17
申请人 ADVANCED MICRO DEVICES, INC. 发明人 GHANDEHARI KOUROS;LAFONTAINE BRUNO;SINGH BHANWAR
分类号 G03F1/00;G03F1/08;G03F1/14;(IPC1-7):C23C8/04;C23C14/04 主分类号 G03F1/00
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