发明名称 |
Photon assisted deposition of hard mask formation for use in manufacture of both devices and masks |
摘要 |
An exemplary method of selectively patterning a hard mask or reticle using a laser to cause deposition of hard mask material in locations forming the hard mask pattern. This method can include providing a vapor in a vapor chamber containing an integrated circuit substrate, and applying a laser to selected areas of the integrated circuit substrate to cause a reaction with the vapor and create a structure on the integrated circuit substrate.
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申请公布号 |
US6589717(B1) |
申请公布日期 |
2003.07.08 |
申请号 |
US20000715951 |
申请日期 |
2000.11.17 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
GHANDEHARI KOUROS;LAFONTAINE BRUNO;SINGH BHANWAR |
分类号 |
G03F1/00;G03F1/08;G03F1/14;(IPC1-7):C23C8/04;C23C14/04 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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