发明名称 |
Programmable conductor random access memory and a method for writing thereto |
摘要 |
The present invention provides an improved write circuit and method for writing a programmable conductor random access memory (PCRAM) cell. The method comprises precharging a bit line to a first voltage and applying a second voltage to a first terminal of a chalcogenide memory element. A second terminal of the chalcogenide memory element is selectively coupled to the bit line to produce a voltage across the memory element sufficient to write a predetermined resistance state into the element. The first voltage may take on two different values to program two different resistance states into the memory element.
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申请公布号 |
US2003117831(A1) |
申请公布日期 |
2003.06.26 |
申请号 |
US20010022722 |
申请日期 |
2001.12.20 |
申请人 |
HUSH GLEN |
发明人 |
HUSH GLEN |
分类号 |
G11C13/00;G11C7/12;G11C11/34;G11C13/02;G11C16/10;H01L27/105;H01L45/00;(IPC1-7):G11C11/00 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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