| 摘要 |
PURPOSE: A method for forming a metal electrode pattern is provided to be capable of preventing the electric short between a metal thin film and a predetermined electrode due to metal grains or wing-tips generated under a common lift-off process by forming a cavity adjacent to the edge portion of a photoresist pattern in an insulating layer. CONSTITUTION: After sequentially forming an SiO2 insulating layer(22) and a photoresist layer on a silicone wafer(21), a photoresist pattern(23) is formed by selectively patterning the photoresist layer. A cavity is formed in the SiO2 insulating layer(22) by dipping the resultant structure into a buffered HF solution. After cleaning the resultant structure, a metal thin film(24) is deposited on the SiO2 insulating layer(22). Then, a lift-off process is carried out for removing the photoresist pattern(23).
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