发明名称 |
Method for fabricating semiconductor device |
摘要 |
After a cobalt film is deposited on a silicon-containing film formed on a semiconductor substrate, a first heat treatment at a relatively low temperature is performed with respect to the semiconductor substrate to cause a reaction between the cobalt film and the silicon layer and thereby form a Co2Si layer or CoSi layer in at least a surface portion of the silicon layer. Then, a silicon-containing film is deposited on the Co2Si layer or CoSi layer and a second heat treatment at a relatively high temperature is performed with respect to the semiconductor substrate to cause a reaction between the silicon-containing film and the Co2Si layer or CoSi layer and thereby form a CoSi2 layer in at least a surface portion of the silicon layer.
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申请公布号 |
US6562716(B2) |
申请公布日期 |
2003.05.13 |
申请号 |
US20000726654 |
申请日期 |
2000.12.01 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
HASHIMOTO SHIN;EGASHIRA KYOKO |
分类号 |
H01L21/02;H01L21/28;H01L21/285;H01L21/336;H01L21/768;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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