| 摘要 |
PROBLEM TO BE SOLVED: To provide a tunnel junction device having good under-damp characteristic and a method of fabricating the same. SOLUTION: A superconducting device 100 comprises a substrate 101 formed of an oxide such as LSAT (La-Sr-Al-Ta-O) or magnesium oxide (MgO), a superconducting lower electrode 102 formed of high-temperature superconductor such as YBCO (Y-Ba2 -Cu3 -O7-x ), a barrier layer 103 obtained by conducting surface process to the superconducting lower electrode 102, a superconducting upper electrode 104 formed of a high temperature superconductor such as YBCO (Y-Ba2 -Cu3 -O7-x ), and a high dielectric constant insulator 105 formed of a high dielectric constant material such as STO (Sr-Ti-O3 ) or BTO (Ba-Ti-O3 ) and is provided closely to the junction area with between the superconducting lower electrode 102 and superconducting upper electrode 104.
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